| Sign In | Join Free | My entremaqueros.com | 
              
  | 
      
| Categories | SiC Substrate | 
|---|---|
| Brand Name: | zmsh | 
| Model Number: | Silicon Carbide Chips | 
| Place of Origin: | China | 
| Payment Terms: | T/T | 
| Delivery Time: | 2-4 weeks | 
| Material: | Silicon Carbide | 
| Size: | Customized | 
| Thickness: | Customrized | 
| Type: | 4H,6H,3C | 
| Application: | 5G communication electric vehicles | 
| Company Info. | 
| SHANGHAI FAMOUS TRADE CO.,LTD | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 

| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal | 
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å | 
| Stacking Sequence | ABCB | ABCACB | 
| Mohs Hardness | ≈9.2 | ≈9.2 | 
| Density | 3.21 g/cm3 | 3.21 g/cm3 | 
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K | 
| Refraction Index @750nm | no = 2.61 ne = 2.66  | no = 2.60 ne = 2.65  | 
| Dielectric Constant | c~9.66 | c~9.66 | 
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K  | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K  | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K  | 
| Band-gap | 3.23 eV | 3.02 eV | 
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm | 
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s | 

| 
                                 |