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S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

Categories UV Photodiode Sensor
Brand Name: Hamamatsu
Model Number: S1337-33BQ
Place of Origin: Japan
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Delivery Time: 3-5workingdays
Packaging Details: Standard Package
MOQ: 1
Supply Ability: 3000/pcs/month
Photosensitive area: 2.4 × 2.4 mm
Package: Ceramic
Cooling: Non-cooled
Reverse voltage (max.): 5 V
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S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance


These Si photodiodes have sensitivity in the Uv to near IR range. They are suitable for low-light-level detection in analysis
and the like.


Features
High uv sensitivity:QE75%(=200 nm)
Low capacitance


Applications
Analytical equipment
Optical measurement eguipment


Specification:

Spectral response range
190 to 1100 nm
Peak sensitivity wavelength (typ.)960 nm
Photosensitivity (typ.)0.5 A/W
Dark current (max.)30 pA
Rise time (typ.)0.2 μs
Terminal capacitance (typ.)65 pF
Noise equivalent power (typ.)8.1×10-15 W/Hz1/2


Quality S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance for sale
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