NCP59800BMNADJTBG onsemi

Here is the English information on the NCP59800BMNADJTBG chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 1A
• Fast Switching Speeds
• PowerPAK SO-8 Package

The NCP59800BMNADJTBG is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 1A
• Low RDS(on) enables high conduction with minimal losses
• Fast switching improves conversion efficiency at high frequencies
• PowerPAK SO-8 package provides strong thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 1A loads
• Battery chargers and protection circuits
• Systems requiring high switching precision

Benefits include the ability to switch up to 1A efficiently. The thermally robust package supports applications requiring continuous operation.

Well-suited for use cases where minimizing losses and managing heat is important for switching currents under 1A.

In summary, the NCP59800BMNADJTBG combines precise 1A switching with a focus on thermal performance and efficiency.

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