NCD57080BDR2G onsemi

Here is the English description of the NCD57080BDR2G chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 5.8A
• Fast Switching Speeds
• TO-220 FullPak 2L Package

The NCD57080BDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 5.8A
• Low RDS(on) minimizes conduction losses
• Fast switching improves efficiency at high frequencies
• TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

• DC/DC converters and voltage regulators below 5.8A loads
• Motor drivers and controls under 5.8A current
• General purpose switching under 5.8A load

Benefits include the ability to switch up to 5.8A with low resistance and losses. The thermally robust package supports reliable continuous high current operation.

Well-suited for applications requiring precise switching of currents around 5.8A where heat dissipation is important.

In summary, the NCD57080BDR2G offers 5.8A current handling capability with minimal resistance and losses, and emphasizes thermal management.

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Our team consists of highly qualified professionals with extensive experience in the field of IC production. We have a state-of-the-art production facility that is equipped with advanced technology and equipment to ensure the highest level of precision and quality in our manufacturing processes.

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We have a wide range of products that cater to various industries, including automotive, consumer electronics, telecommunications, and more. Our products are designed to meet the highest industry standards and are rigorously tested to ensure their reliability and performance.