MC33035DWR2G onsemi

Here is the English description of the MC33035DWR2G chip:

• Function: Dual N-Channel Enhancement Mode MOSFET
• Continuous Drain Current (ID): 3.5A per channel
• Drain-Source breakdown voltage (VDS): 30V
• On-resistance (RDS(on)): 30mΩ max per channel
• Package: DPAK (TO-252)

The MC33035DWR2G is a dual N-channel MOSFET from ON Semiconductor.

Key Features:

• Integrated dual 3.5A switch in a single package
• Low 30mΩ RDS(on) minimizes conduction losses
• DPAK package provides robust mounting and heat dissipation
• Allows independent control of two 3.5A current loads

Common Applications:

• Synchronous buck regulators and converters
• Dual channel motor driver circuits up to 3.5A each
• Any application requiring dual current switches

Benefits include a rugged dual switch solution optimized for efficiently controlling up to 3.5A per channel.

Well-suited for applications requiring independent switching of 3.5A loads across two channels with a focus on durability.

In summary, the MC33035DWR2G integrates a dual 3.5A/channel switch with low resistance in a package enabling robust construction.

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