Home > Wire Mesh >

QPD1003

Categories	RF Semiconductors
Transistor Polarity ::	N-Channel
Technology ::	GaN SiC
Product Category ::	RF JFET Transistors
Mounting Style ::	SMD/SMT
Gain ::	19.9 dB
Transistor Type ::	HEMT
Output Power ::	540 W
Package / Case ::	RF-565
Maximum Operating Temperature ::	+ 85 C
Vds - Drain-Source Breakdown Voltage ::	50 V
Packaging ::	Tray
Id - Continuous Drain Current ::	15 A
Vgs - Gate-Source Breakdown Voltage ::	145 V
Pd - Power Dissipation ::	370 W
Manufacturer ::	Qorvo
Description:	RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

Contact Now

Add to Cart

Company Info.

Shenzhen Chive Electronics Co., Ltd.

View Contact Details

Product List

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Product Details
Company Profile

QPD1003

The QPD1003,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

Product Tags:

XC95288XL-PQ208

XQ4010E-4PG191M

XC95288XL PQ208

QPD1003

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Chive Electronics Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!