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| Categories | Display Driver ICs | 
|---|---|
| Model Number: | 74HC245PW | 
| Certification: | new & original | 
| Place of Origin: | original factory | 
| MOQ: | 20pcs | 
| Price: | negotiation | 
| Payment Terms: | T/T, Western Union,PayPal | 
| Supply Ability: | 20000pcs | 
| Delivery Time: | 1 day | 
| Packaging Details: | please contact me for details | 
| Description: | Transceiver, Non-Inverting 1 Element 8 Bit per Element 3-State Output 20-TSSOP | 
| feature 1: | Octal bidirectional bus interface | 
| feature 2: | Non-inverting 3-state outputs | 
| feature 3: | Multiple package options | 
| feature 4: | Complies with JEDEC standard no. 7A | 
| ESD protection 1: | HBM EIA/JESD22-A114-B exceeds 2000 V | 
| ESD protection 2: | MM EIA/JESD22-A115-A exceeds 200 V | 
1. General description
The 74HC245; 74HCT245 is a high-speed Si-gate CMOS device and is pin compatible with Low-Power Schottky TTL (LSTTL).
The 74HC245; 74HCT245 is an octal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The 74HC245; 74HCT245 features an output enable input (OE) for easy cascading and a send/receive input (DIR) for direction control. OE controls the outputs so that the buses are effectively isolated.
The 74HC245; 74HCT245 is similar to the 74HC640; 74HCT640 but has true (non-inverting) outputs.
2. Features
■ Octal bidirectional bus interface
■ Non-inverting 3-state outputs
■ Multiple package options
■ Complies with JEDEC standard no. 7A
■ ESD protection:
◆ HBM EIA/JESD22-A114-B exceeds 2000 V
◆ MM EIA/JESD22-A115-A exceeds 200 V
■ Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Quick reference data
GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | 
| Type 74HC245 | ||||||
| tPHL, tPLH | propagation delay An to Bn or Bn to An | CL = 15 pF; VCC =5V | - | 7 | - | ns | 
| CI | input capacitance | - | 3.5 | - | pF | |
| CI/O | input/output capacitance | - | 10 | - | pF | |
| CPD | power dissipation capacitance per transceiver | VI = GND to VCC | [1] - | 30 | - | pF | 
| Type 74HC245 | ||||||
| tPHL, tPLH | propagation delay An to Bn or Bn to An | CL = 15 pF; VCC =5V | - | 10 | - | ns | 
| CI | input capacitance | - | 3.5 | - | pF | |
| CI/O | input/output capacitance | - | 10 | - | pF | |
| CPD | power dissipation capacitance per transceiver | VI = GND to VCC − 1.5 V | [1] - | 30 | - | pF | 
[1] CPD is used to determine the dynamic power dissipation (PD in µW):
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑ (CL × VCC2 × fo) = sum of outputs.
4. Functional diagram
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