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| Categories | IGBT Modules |
|---|---|
| Brand Name: | Infineon |
| Model Number: | F3L75R12W1H3_B27 |
| Place of Origin: | Germany |
| MOQ: | 1PCS |
| Price: | Bargain |
| Payment Terms: | L/C, T/T |
| Supply Ability: | 500 PCS+48hours |
| Delivery Time: | 48hours |
| Packaging Details: | Tray |
| Infineon: | F3L75R12W1H3_B27 |
| Configuration: | 3-Phase Inverter |
| Collector-emitter maximum voltage VCEO: | 1.2 kV |
| Collector-emitter saturation voltage: | 1.45 V |
| Continuous collector current at 25C: | 45 A |
| Gate-emitter leakage current: | 100 nA |
| Pd-power dissipation: | 275 W |
| Minimum working temperature: | -40℃ |
| Maximum working temperature: | +150℃ |
| Packaging: | 24 PCS |
| Company Info. |
| Eastern Stor International Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
F3L75R12W1H3_B27 SP001056132 Infineon IGBT Module LOW POWER EASY
F3L75R12W1H3B27BOMA1
Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: 3-Phase Inverter
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.45 V
Continuous collector current at 25 C: 45 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 275 W
Package / Box: EasyPack1B
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Series: High Speed IGBT H3
Packing Quantity: 24 PCS
Subcategory: IGBTs
Technology: Si


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