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CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP

Categories	Flash Memory IC Chip
Brand Name:	Ti
Model Number:	CSD17578Q3A
MOQ:	Contact us
Price:	Contact us
Payment Terms:	Paypal, Western Union, TT
Supply Ability:	50000 Pieces per Day
Delivery Time:	The goods will be shipped within 3 days once received fund
Packaging Details:	DFN33
Description:	MOSFET N-CH 30V 20A 8VSON
Channel Mode:	Enhancement
Configuration:	Single
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	Mounting Style
Technology:	Si

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Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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CSD17578Q3A Mosfet Power Transistor MOSFET CSD17578Q3A 30 V 8-VSONP

1 Features

2 Applications

Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Optimized for Control FET Applications

3 Description

This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5 V)	7.9		nC
Qgd	Gate Charge Gate to Drain	1.7		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	8.2	mΩ
RDS(on)	Drain-to-Source On-Resistance	VGS =10V	6.3	mΩ
VGS(th)	Threshold Voltage	1.5		V

Ordering Information

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package limited)	20	A
	Continuous Drain Current (Silicon limited), TC = 25°C	54
	Continuous Drain Current(1)	14
IDM	Pulsed Drain Current(2)	142	A
PD	Power Dissipation(1)	2.5	W
PD	Power Dissipation, TC = 25°C	37	W
TJ, Tstg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID =22A,L=0.1mH,RG =25Ω	24	mJ

Product Tags:

p channel mosfet driver circuit

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