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| Categories | Electronic IC Chips |
|---|---|
| Model Number: | IRFB4229PBF |
| Certification: | new & original |
| Place of Origin: | original factory |
| MOQ: | 20pcs |
| Price: | Negotiate |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 9000pcs |
| Delivery Time: | 1 day |
| Packaging Details: | Please contact me for details |
| Description: | N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB |
| Gate-to-Source Voltage: | ±30 V |
| Pulsed Drain Current: | 180 A |
| Repetitive Peak Current: | 91 A |
| Linear Derating Factor: | 2.2 W/°C |
| Operating Junction and Storage Temperature: | -40 to + 175°C |
| Soldering Temperature for 10 seconds: | 300°C |
PDP SWITCH IRFB4229PbF
Features
• Advanced Process Technology
• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,
Energy Recovery and Pass Switch Applications
• Low QG for Fast Response
• High Repetitive Peak Current Capability for Reliable Operation
• Short Fall & Rise Times for Fast Switching
• 175°C Operating Junction Temperature for Improved Ruggedness
• Repetitive Avalanche Capability for Robustness and Reliability
Key Parameters
| VDS min | 250 | V |
| VDS (Avalanche) typ. | 300 | V |
| RDS(ON) typ. @ 10V | 38 | mΩ |
| IRP max @ TC= 100°C | 91 | A |
| TJ max | 175 | °C |
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| VGS | Gate-to-Source Voltage | ±30 | V |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 46 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 33 | A |
| IDM | Pulsed Drain Current | 180 | A |
| IRP @ TC = 100°C | Repetitive Peak Current | 91 | A |
| PD @TC = 25°C | Power Dissipation | 330 | W |
| PD @TC = 100°C | Power Dissipation | 190 | W |
| Linear Derating Factor | 2.2 | W/°C | |
| TJ TSTG | Operating Junction and Storage Temperature Range | -40 to + 175 | °C |
| Soldering Temperature for 10 seconds | 300 | °C | |
| Mounting Torque, 6-32 or M3 Screw | 10lbin (1.1Nm) | N |
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