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| Categories | Electronic IC Chips |
|---|---|
| Model Number: | STP20NM50FP |
| Certification: | new & original |
| Place of Origin: | original factory |
| MOQ: | 10pcs |
| Price: | Negotiate |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 7900pcs |
| Delivery Time: | 1 day |
| Packaging Details: | Please contact me for details |
| Description: | N-Channel 550 V 20A (Tc) 45W (Tc) Through Hole TO-220FP |
| Gate-Source Voltage: | ± 30 V |
| Peak Diode Recovery voltage slope: | 15 V/ns |
| Operating Junction Temperature: | -65 to 150 °C |
| Storage Temperature: | -65 to 150 °C |
| Thermal Resistance Junction-amb Max: | 62.5 °C/W |
| Maximum Lead Temperature For Soldering Purpose: | 300 °C |
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK
Zener-Protected SuperMESH™ MOSFET
General features
| Type | VDSS(@Tj max) | RDS(on) | ID |
STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP | 550 V 550 V 550 V 550 V | <0.25 Ω <0.25 Ω <0.25 Ω <0.25 Ω | 20 A 20 A 20 A 20 A |
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
Description
The MDmesh™ is a new revolutionary MOSFET technology that
associates the Multiple Drain process with the Company’s
PowerMESH™horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high dv/dt and exellent
avalanche characteristics and dynamic performances.
Applications
The MDmesh™ family is very suitable for increasing power density of
high voltage converters allowing system miniaturization andhiher
efficiencies.
Absolute maximum ratings
| Symbol | Parameter | Value | Unit | |
| TO-220/D²PAK/I²PAK | TO-220FP | |||
| VGS | Gate-Source Voltage | ± 30 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 20 | 20 (Note 3) | A |
| ID | Drain Current (continuous) at TC = 100°C | 12.6 | 12.6 (Note 3) | A |
| IDM Note 2 | Drain Current (pulsed) | 80 | 80 (Note 3) | A |
| PTOT | Total Dissipation at TC = 25°C | 192 | 45 | W |
| Derating Factor | 1.2 | 0.36 | W/°C | |
| dv/dt Note 1 | Peak Diode Recovery voltage slope | 15 | V/ns | |
| VISO | Insulation Withstand Volatge (DC) | - | 2000 | V |
Tj Tstg | Operating Junction Temperature Storage Temperature | -65 to 150 | °C | |
Package
Internal schematic diagram
Stock Offer (Hot Sell)
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