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SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

Categories	Electronic IC Chips
Model Number:	SPW35N60CFD
Certification:	new & original
Place of Origin:	original factory
MOQ:	10pcs
Price:	Negotiate
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8600pcs
Delivery Time:	1 day
Packaging Details:	Please contact me for details
Description:	N-Channel 600 V 34.1A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
Pulsed drain current:	85 A
Avalanche current, repetitive t AR:	20 A
Drain source voltage slope:	80 V/ns
Reverse diode dv /dt:	40 V/ns
Power dissipation:	313 W
Operating and storage temperature:	-55 to 150 °C

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Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

CoolMOSTM Power Transistor

Features PG-TO247
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant

Product Summary

V_DS	600	V
R_DS(on),max	0.118	Ω
I_D	34	A

Maximum ratings, at T j =25 °C, unless otherwise specified

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I _D	T _C=25 °C	34.1	A
Continuous drain current	I _D	T _C=100 °C	21.6	A
Pulsed drain current²⁾	I _D,pulse	T C=25 °C	85	A
Avalanche energy, single pulse	E _AS	I _D=10 A, V _DD=50 V	1300	mJ
Avalanche energy, repetitive t _AR ^2),3)	E _AR	I _D=20 A, V _DD=50 V	1	mJ
Avalanche current, repetitive t _AR ^2),3)	I _AR		20	A
Drain source voltage slope	dv /dt	_{I D}=34.1 A, V _DS=480 V, T j =125 °C	80	V/ns
Reverse diode dv /dt	dv /dt	I _S=34.1 A, V _DS=480 V, T j =125 °C	40	V/ns
Maximum diode commutation speed	di /dt	I _S=34.1 A, V _DS=480 V, T j =125 °C	600	A/µs
Gate source voltage	V GS	static	±20	V
Gate source voltage	V GS	AC (f >1 Hz)	±30	V
Power dissipation	P tot	T C=25 °C	313	W
Operating and storage temperature	T j , T stg		-55 ... 150	°C

PG-TO247-3-21-41

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Q'ty

MFG

D/C

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Product Tags:

multi emitter transistor

silicon power transistors

SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

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