Home > Energy Meters >

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Categories	Electronic IC Chips
Model Number:	BSP315
Certification:	Original Factory Pack
Place of Origin:	China
MOQ:	20pcs
Price:	Negotiation
Payment Terms:	T/T , Western Union,PayPal
Supply Ability:	6800PCS
Delivery Time:	1 Day
Packaging Details:	please contact me for details
Description:	P-Channel 50 V 1A 1.8W Surface Mount SOT-223
Main Line:	Ic,module,transistor,diodes,capacitor,resistor Etc
Features:	P channel
Features2:	Enhancement mode
Features3:	• Logic Level
Features4:	VGS(th) = -0.8...-2.0 V
Package:	SOT-23

Contact Now

Add to Cart

Company Info.

ChongMing Group (HK) Int'l Co., Ltd

View Contact Details

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

• P channel

• Enhancement mode

• Logic Level

• VGS(th) = -0.8...-2.0 V

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )

Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T

Maximum Ratings

Parameter	Symbol	Values	Unit
Drain source voltage	V_DS	-50	V
Drain-gate voltage RGS = 20 kΩ	V_DGR	-50
Gate source voltage	V_GS	± 20
Continuous drain current TA = 39 °C	I_D	-1.1	A
DC drain current, pulsed TA = 25 °C	I_Dpuls	-4.4	A
Power dissipation TA = 25 °C	P_tot	1.8	W

Product Tags:

power mosfet ic

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	ChongMing Group (HK) Int'l Co., Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!