BSP129H6327XTSA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	Depletion Mode
Vgs(th) (Max) @ Id:	1V @ 108µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:	5.7 nC @ 5 V
Rds On (Max) @ Id, Vgs:	6Ohm @ 350mA, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	0V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	240 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	108 pF @ 25 V
Mounting Type:	Surface Mount
Series:	SIPMOS®
Supplier Device Package:	PG-SOT223-4
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	350mA (Ta)
Power Dissipation (Max):	1.8W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	BSP129
Description:	MOSFET N-CH 240V 350MA SOT223-4

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 240 V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Product Tags:

MD2114

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