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HN4C51J(TE85L,F)

Categories Bipolar Transistor Arrays
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays
Current - Collector (Ic) (Max): 100mA
Product Status: Active
Transistor Type: 2 NPN (Dual) Common Base
Mounting Type: Surface Mount
Frequency - Transition: 100MHz
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series: -
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Supplier Device Package: SMV
Mfr: Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 300mW
Package / Case: SC-74A, SOT-753
Operating Temperature: 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Base Product Number: HN4C51
Description: TRANS 2NPN 120V 0.1A SMV
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HN4C51J(TE85L,F)

Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Base 120V 100mA 100MHz 300mW Surface Mount SMV
Product Tags:

TE28F128J3D-75

  

STW26NM60N

  

TE28F128J3D75ES

  
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