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| Categories | Mosfet Power Transistor | 
|---|---|
| Brand Name: | Original brand | 
| Model Number: | DMHT3006LFJ-13 | 
| Certification: | Original | 
| Place of Origin: | Original | 
| MOQ: | 3000pcs | 
| Price: | Negotiation | 
| Payment Terms: | T/T | 
| Supply Ability: | 100000pcs | 
| Delivery Time: | 2-3days | 
| Packaging Details: | 3000/Reel | 
| Product: | MOSFET MOSFET BVDSS: 25V-30V | 
| Technology: | Si | 
| Package: | V-DFN5045-12 | 
| Transistor Polarity: | N-Channel | 
| Channel Pattern: | Enhancement | 
| Pd-Power Dissipation: | 2.1 W | 
| Vds-Leakage source breakdown electric shock: | 30 V | 
Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Feature
Low On-Resistance 
Low Input Capacitance 
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data 
Case: V-DFN5045-12 
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 
Moisture Sensitivity: Level 1 per J-STD-020 
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 
Weight: 0.056grams (Approximate)
| Categories | MOSFET MOSFET BVDSS: 25V-30V | 
|---|---|
| DMHT3006LFJ-13 | |
| Transistor Polarity | N-Channel | 
| Channel No. | 4 Channel | 
| Leakage Source on-resistance | 10 mOhms | 
| Working Temperature | -55C to +150C | 
| Pd-Power Dissipation | 2.1 W | 
| Vgs th-Gate Source threshold Voltage | 30 V | 
| Configure | Quad | 
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