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GT10J312(Q) IGBT Power Module Transistors IGBTs Single

Categories IGBT Power Module
Part Number: GT10J312(Q)
Manufacturer: Toshiba Semiconductor and Storage
Description: IGBT 600V 10A 60W TO220SM
Category: Transistors - IGBTs - Single
Family: Transistors - IGBTs - Single
Place of Origin: Original
MOQ: Negotiable
Price: Negotiable
Delivery Time: Negotiable
Payment Terms: T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 100000
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GT10J312(Q) IGBT Power Module Transistors IGBTs Single

GT10J312(Q) Specifications

Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)10A
Current - Collector Pulsed (Icm)20A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max60W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C400ns/400ns
Test Condition300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-220SM
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

GT10J312(Q) Packaging

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Quality GT10J312(Q) IGBT Power Module Transistors IGBTs Single for sale
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