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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FDN340P |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drive VoDrive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 70mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Vgs (Max): | ±8V |
FDN340P MOSFET Power Electronics Single P-Channel POWERTRENCH Logic Level Package SOT-23
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 779 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case |
General Description
This P−Channel Logic Level MOSFET is produced using onsemi advanced
POWERTRENCH process that has been especially tailored to minimize
the on−state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery charging
circuits, and dc−dc conversion.
Features
• −2 A, 20 V
♦ RDS(ON) = 70 m @ VGS = −4.5 V
♦ RDS(ON) = 110 m @ VGS = −2.5 V
• Low Gate Charge (7.2 nC Typical)
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power Version of Industry Standard SOT−23 Package. Identical
Pin−Out to SOT−23 with 30% Higher Power Handling Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

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