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| Categories | MOSFET Power Electronics | 
|---|---|
| Brand Name: | onsemi | 
| Model Number: | FDD3672 | 
| Place of Origin: | original | 
| MOQ: | 1 | 
| Price: | Negotiable | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 999999 | 
| Delivery Time: | 1-3 days | 
| Packaging Details: | standard | 
| Drain to Source Voltage (Vdss): | 100 V | 
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta), 44A (Tc) | 
| Rds On (Max) @ Id, Vgs: | 28mOhm @ 44A, 10V | 
| Vgs(th) (Max) @ Id: | 4V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V | 
| Vgs (Max): | ±20V | 
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications
FET Type  | ||
Technology  | MOSFET (Metal Oxide)  | |
Drain to Source Voltage (Vdss)  | ||
Current - Continuous Drain (Id) @ 25°C  | ||
Drive Voltage (Max Rds On, Min Rds On)  | 6V, 10V  | |
Rds On (Max) @ Id, Vgs  | 28mOhm @ 44A, 10V  | |
Vgs(th) (Max) @ Id  | 4V @ 250µA  | |
Gate Charge (Qg) (Max) @ Vgs  | 36 nC @ 10 V  | |
Vgs (Max)  | ±20V  | |
Input Capacitance (Ciss) (Max) @ Vds  | 1710 pF @ 25 V  | |
FET Feature  | -  | |
Power Dissipation (Max)  | 135W (Tc)  | |
Operating Temperature  | -55°C ~ 175°C (TJ)  | |
Mounting Type  | ||
Supplier Device Package  | TO-252AA  | |
Package / Case  | 
Product Listing:
ON Semiconductor FDD3672 - N-Channel Power MOSFET
The FDD3672 is a N-Channel power MOSFET manufactured by ON Semiconductor. It offers excellent power dissipation, low gate charge and fast switching speed.
Features:
• 100V drain-source breakdown voltage
• Maximum continuous drain current of 10.2A
• Low gate charge: Qg = 16nC typical
• Maximum drain-source on-state resistance of 0.48Ω
• Internal avalanche energy rated at EAS = 7.3mJ
• Maximum operating junction temperature of 175°C
• Average gate charge: Qg = 16nC typical
• Fast switching speed: tD(on) = 10ns typical
• Lead-free, RoHS-compliant package

                                 
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