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| Categories | MOSFET Power Electronics | 
|---|---|
| Brand Name: | onsemi | 
| Model Number: | NTR4171PT1G | 
| Place of Origin: | original | 
| MOQ: | 1 | 
| Price: | Negotiable | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 999999 | 
| Delivery Time: | 1-3 days | 
| Packaging Details: | standard | 
| Drain to Source Voltage (Vdss): | 30 V | 
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) | 
| Rds On (Max) @ Id, Vgs: | 75mOhm @ 2.2A, 10V | 
| Vgs(th) (Max) @ Id: | 1.4V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs: | 15.6 nC @ 10 V | 
| Vgs (Max): | ±12V | 
| FET Type | ||
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | ||
| Current - Continuous Drain (Id) @ 25°C | ||
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.2A, 10V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 10 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 480mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | ||
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case | 
Product Listing:
ON Semiconductor NTR4171PT1G - N-Channel Power MOSFET
• Vds - Drain to Source Voltage: 100V
• Id - Continuous Drain Current: 4.1A
• Rds - Drain to Source On-State Resistance: 0.29 Ohms
• Vgs - Gate to Source Voltage: ±20V
• Vth - Threshold Voltage: 4.0V
• Pd - Power Dissipation: 2.8W
• Gate Charge: 11.5nC
• Input Capacitance: 236pF
• Output Capacitance: 77pF
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: Through Hole

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