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NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor
Categories MOSFET Power Electronics
Brand Name: onsemi
Model Number: NDS355AN
Place of Origin: original
MOQ: 1
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 999999
Delivery Time: 1-3 days
Packaging Details: standard
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Vgs (Max): ±20V
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Company Info.
Shenzhen Sai Collie Technology Co., Ltd.
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NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor


Single P-Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel 1.8V Specified PowerTrench MOSFET–20 V, –0.83 A, 0.5 Ω
–20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET
–20 V, –0.83 A, 0.5

Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very small outline surface mount package.© 1997 Fairchild Semiconductor Corporation.
Features:
1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V
RDS(ON) = 0.085 Ω @ VGS = 10 V.
Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface mount.
• Battery protection

Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.


Product Tags:

inductor common mode

  

n channel mosfet transistor

  

n channel power mosfet

  
Quality NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor for sale

NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

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