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| Categories | MOSFET Power Electronics | 
|---|---|
| Brand Name: | onsemi | 
| Model Number: | MMBF170 | 
| Place of Origin: | original | 
| MOQ: | 1 | 
| Price: | Negotiable | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 999999 | 
| Delivery Time: | 1-3 days | 
| Packaging Details: | standard | 
| Drain to Source Voltage (Vdss): | 60 V | 
| Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) | 
| Drive Voltage (Max Rds On, Min Rds On): | 10V | 
| Rds On (Max) @ Id, Vgs: | 5Ohm @ 200mA, 10V | 
| Vgs(th) (Max) @ Id: | 3V @ 1mA | 
| Vgs (Max): | ±20V | 
MOSFET Power Electronics MMBF170 High-Performance Low-Voltage Switching for Heavy-Duty Applications
FET Type  | ||
Technology  | MOSFET (Metal Oxide)  | |
Drain to Source Voltage (Vdss)  | ||
Current - Continuous Drain (Id) @ 25°C  | ||
Drive Voltage (Max Rds On, Min Rds On)  | 10V  | |
Rds On (Max) @ Id, Vgs  | 5Ohm @ 200mA, 10V  | |
Vgs(th) (Max) @ Id  | 3V @ 1mA  | |
Vgs (Max)  | ±20V  | |
Input Capacitance (Ciss) (Max) @ Vds  | 40 pF @ 10 V  | |
FET Feature  | -  | |
Power Dissipation (Max)  | 300mW (Ta)  | |
Operating Temperature  | -55°C ~ 150°C (TJ)  | |
Mounting Type  | ||
Supplier Device Package  | SOT-23-3  | |
Package / Case  | 
Product Listing:
ON Semiconductor MMBF170 N-Channel Enhancement Mode Power MOSFET
Features:
• Low On-Resistance
• Low Input and Output Capacitance
• Fast Switching Speed
• High Gain
• Low Threshold Voltage
• Low Gate Charge
Specifications:
• Transistor Polarity: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Gate to Source Voltage (Vgs): 20V
• Current – Continuous Drain (Id) @ 25°C: 17A
• Power Dissipation (Pd): 150W
• Drain to Source Resistance Rds(on): 0.0045Ω
• Input Capacitance (Ciss) @ Vds: 300pF
• Output Capacitance (Coss) @ Vds: 70pF
• Switching Time (tON): 5ns
• Switching Time (tOFF): 10ns
• Operating Temperature Range: -55°C to +150°C

                                 
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