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| Categories | MOSFET Power Electronics | 
|---|---|
| Brand Name: | onsemi | 
| Model Number: | NDS7002A | 
| Place of Origin: | original | 
| MOQ: | 1 | 
| Price: | Negotiable | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 999999 | 
| Delivery Time: | 1-3 days | 
| Packaging Details: | standard | 
| Drain to Source Voltage (Vdss): | 60 V | 
| Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) | 
| Rds On (Max) @ Id, Vgs: | 2Ohm @ 500mA, 10V | 
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA | 
| Input Capacitance (Ciss) (Max) @ Vds: | 50 pF @ 25 V | 
| Vgs (Max): | ±20V | 
NDS7002A MOSFET Power Electronics – Advanced High-Performance Solution for Demanding Power Applications
| FET Type | ||
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | ||
| Current - Continuous Drain (Id) @ 25°C | ||
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300mW (Ta) | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | ||
| Supplier Device Package | SOT-23-3 | |
| Package / Case | 
NDS7002A MOSFET Power Electronics
Manufacturer: ON Semiconductor
Product Features:
• Enhanced RDS(on) with Very Low Qg, Qgd and Qgs
• Low Gate Charge for Reduced Switching Losses
• Low Output Capacitance for Improved Transient Response
• Low Threshold Voltage for Improved Efficiency
• Low Gate-Source Leakage
• Enhanced Avalanche and dV/dt Ruggedness
• Compliant to RoHS Directive 2011/65/EU
Absolute Maximum Ratings:
• Drain-Source Voltage: 600V
• Gate-Source Voltage: ±20V
• Drain Current (continuous): 5A
• Drain Current (pulsed): 10A
• Channel Temperature: -55°C to +175°C
• Storage Temperature: -55°C to +175°C
• Power Dissipation: 12W
Electrical Characteristics:
• RDS(on): 0.5Ω
• Qg: 7.3nC
• Qgd: 0.9nC
• Qgs: 2.0nC
• Threshold Voltage: 2.7V

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