FDMS4D0N12C N-Channel MOSFET Power Electronics Module with High Efficiency and Low On-Resistance

Categories	MOSFET Power Electronics
Brand Name:	onsemi
Model Number:	FDMS4D0N12C
Place of Origin:	original
MOQ:	1
Price:	Negotiable
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	999999
Delivery Time:	1-3 days
Packaging Details:	standard
Drain to Source Voltage (Vdss):	120 V
Current - Continuous Drain (Id) @ 25°C:	18.5A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs:	4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:	4V @ 370A
Gate Charge (Qg) (Max) @ Vgs:	82 nC @ 10 V
Vgs (Max):	±20V

Contact Now

Add to Cart

Company Info.

Shenzhen Sai Collie Technology Co., Ltd.

View Contact Details

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Sai Collie Technology Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id	4V @ 370A
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6460 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta), 106W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerTDFN

n channel power mosfet