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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FQA13N80-F109 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1 - 3 days |
| Packaging Details: | standard |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800V |
| Mounting Type: | Through Hole |
| Vgs (Max): | ±30V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 6.3A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-3PN | |
| Package / Case |
FQA13N80-F109 is a high-performance, high-temperature, low-loss N-channel MOSFET that features an advanced design for maximum power density and superior efficiency. The device is housed in a TO-3P-3 package which makes it suitable for high-temperature applications. It has a drain-source voltage rating of 800V and a drain current rating of 13A.
It also has a low on-resistance of 0.7 ohms, a low gate charge of 11nC, and a fast switching speed. The FQA13N80-F109 is an ideal choice for power electronics applications such as solar inverters, motor drives, and DC-DC converters. It provides improved efficiency, power density, and reliability in these applications.
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