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| Categories | Tip Power Transistors |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | Hua Xuan Yang |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | MJE13003 |
| Type: | Triode Transistor |
| Material: | Silicon |
| Power mosfet transistor: | TO-126 Plastic-Encapsulate |
| Product name: | semiconductor triode type |
| Tj: | 150℃ |
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN)
Ÿ Power Switching Applications
MARKING
MJE13003=Device code
Solid dot = Green molding compound device, if none, the normal device
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| MJE13003 | TO-126 | Bulk | 200pcs/Bag |
| MJE13003-TU | TO-126 | Tube | 60pcs/Tube |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector -Base Voltage | 600 | V |
| VCEO | Collector-Emitter Voltage | 420 | V |
| VEBO | Emitter-Base Voltage | 7 | V |
| IC | Collector Current -Continuous | 0.2 | A |
| PC | Collector Power Dissipation | 0.75 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55 ~150 | ℃ |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 0.1mA,IE=0 | 600 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA,IB=0 | 400 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=0.1mA,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=600V,IE=0 | 100 | uA | ||
| Collector cut-off current | ICEO | VCE=400V,IB=0 | 100 | uA | ||
| Emitter cut-off current | IEBO | VEB=7V,IC=0 | 10 | uA | ||
| DC current gain | hFE(1)* | VCE=10V, IC=200mA | 20 | 30 | ||
| hFE(2) | VCE=10V, IC=250μA | 5 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=200mA,IB=40mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=200mA,IB=40mA | 1.1 | V | ||
| Transition frequency | fT | VCE=10V, IC=100mA,f=1MHz | 5 | MHz | ||
| Fall time | tf | IC=100mA | 0.5 | μs | ||
| Storage time | tS* | IC=100mA | 2 | 4 |
TO-92 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 2.500 | 2.900 | 0.098 | 0.114 |
| A1 | 1.100 | 1.500 | 0.043 | 0.059 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.450 | 0.600 | 0.018 | 0.024 |
| D | 7.400 | 7.800 | 0.291 | 0.307 |
| E | 10.600 | 11.000 | 0.417 | 0.433 |
| e | 2.290 TYP | 0.090 TYP | ||
| e1 | 4.480 | 4.680 | 0.176 | 0.184 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 15.300 | 15.700 | 0.602 | 0.618 |
| L1 | 2.100 | 2.300 | 0.083 | 0.091 |
| P | 3.900 | 4.100 | 0.154 | 0.161 |
| Φ | 3.000 | 3.200 | 0.118 | 0.126 |
|
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