HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

HXY4606 30V Complementary MOSFET

Description

The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.

A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P_D is based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT_J=25°C.

D. The R_θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.