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| Categories | Mosfet Power Transistor |
|---|---|
| Brand Name: | Hua Xuan Yang |
| Model Number: | AP5N10SI |
| Certification: | RoHS、SGS |
| Place of Origin: | ShenZhen China |
| MOQ: | Negotiation |
| Price: | Negotiated |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Delivery Time: | 1 - 2 Weeks |
| Packaging Details: | Boxed |
| Product name: | N Channel Mosfet Power Transistor |
| Model: | AP5N10SI |
| Pack: | SOT89-3 |
| Marking: | AP5N10SI YYWWWW |
| VDSDrain-Source Voltage: | 100V |
| VGSGate-Sou rce Voltage: | ±20A |
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
N Channel Mosfet Power Transistor Description:
The AP5N10SI is the single N-Channel logic
enhancement mode power field effect transistors to
provide excellent R DS(on), low gate charge and low
gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS,
notebook computer power management and other
battery powered circuits.
N Channel Mosfet Power Transistor Features:
RDS(ON)<125m Ω @VGS=10V (N-Ch)
RDS(ON)<135mΩ @VGS =4.5V (N-Ch)
Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC current
N Channel Mosfet Power Transistor Applications:
Switching power supply, SMPS
Battery Powered System
DC/DC Converter
DC/AC Converter
Load Switch
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP5N10SI | SOT89-3 | AP5N10SI YYWWWW | 1000 |
Table 1.Absolute Maximum Ratings (TA=25℃)
| Symbol | Parameter | Value | Unit |
| VDS | Drain-Source Voltage (VGS=0V) | 100 | V |
| VGS | Gate-Source Voltage (VDS=0V) | ±25 | V |
D I | Drain Current-Continuous(Tc=25 ℃) | 5 | A |
| Drain Current-Continuous(Tc=100 ℃) | 3.1 | A | |
| IDM (pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | 20 | A |
| PD | Maximum Power Dissipation | 9.3 | W |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 150 | ℃ |
| Symbol | Parameter | Value | Unit |
| VDS | Drain-Source Voltage (VGS=0V) | 100 | V |
| VGS | Gate-Source Voltage (VDS=0V) | ±25 | V |
D I | Drain Current-Continuous(Tc=25 ℃) | 5 | A |
| Drain Current-Continuous(Tc=100 ℃) | 3.1 | A | |
| IDM (pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | 20 | A |
| PD | Maximum Power Dissipation | 9.3 | W |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 150 | ℃ |
Table 2.Thermal Characteristic
| Symbol | Parameter | Typ | Value | Unit |
| R JA | Thermal Resistance, Junction-to-Ambient | - | 13.5 | ℃/W |
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| On/Off States | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V ID=250μA | 100 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | 100 | μA | ||
| IGSS | Gate-Body Leakage Current | VGS=±20V,VDS=0V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250 μA | 1 | 1.5 | 3 | V |
RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID= 10A | 110 | 125 | m Ω | |
| VGS=4.5V, ID=-5A | 120 | 135 | m Ω | |||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 690 | pF | ||
| Coss | Output Capacitance | 120 | pF | |||
| Crss | Reverse Transfer Capacitance | 90 | pF | |||
| Switching Times | ||||||
| td(on) | Turn-on Delay Time | 11 | nS | |||
r t | Turn-on Rise Time | 7.4 | nS | |||
| td(off) | Turn-Off Delay Time | 35 | nS | |||
f t | Turn-Off Fall Time | 9.1 | nS | |||
| Qg | Total Gate Charge | VDS=15V,ID=10A V GS=10V | 15.5 | nC | ||
| Qgs | Gate-Source Charge | 3.2 | nC | |||
| Qgd | Gate-Drain Charge | 4.7 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| ISD | Source-Drain Current(Body Diode) | 20 | A | |||
| VSD | Forward on Voltage (Note 1) | VGS=0V,IS=2A | 0.8 | V | ||
Reflow Soldering:
The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and
the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture
in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface
temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness
2.5 mm or with a volume 350 mm
3
so called thick/large packages). The top-surface temperature of the packages should
preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm so called thin/small packages).
| Stage | Condition | Duration |
| 1’st Ram Up Rate | max3.0+/-2 /sec | - |
| Preheat | 150 ~200 | 60~180 sec |
| 2’nd Ram Up | max3.0+/-2 /sec | - |
| Solder Joint | 217 above | 60~150 sec |
| Peak Temp | 260 +0/-5 | 20~40 sec |
| Ram Down rate | 6 /sec max | - |
Wave Soldering:
Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.
Manual Soldering:
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
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