| Sign In | Join Free | My entremaqueros.com |
|
| Sign In | Join Free | My entremaqueros.com |
|
| Categories | Mosfet Power Transistor |
|---|---|
| Brand Name: | Hua Xuan Yang |
| Model Number: | 5N20DY |
| Certification: | RoHS、SGS |
| Place of Origin: | ShenZhen China |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Delivery Time: | 1 - 2 Weeks |
| Packaging Details: | Boxed |
| Product name: | Mosfet Power Transistor |
| APPLICATION: | Power Management |
| FEATURE: | Excellent RDS(on) |
| Power mosfet transistor: | Enhancement Mode Power MOSFET |
5N20D / Y 200V N-Channel Enhancement Mode MOSFET
The AP50N20D uses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
FEATURES
VDS =200V,ID =5A
RDS(ON) <520mΩ @ VGS=4.5V
Application
Load switching
Hard switched and high frequency circuits Uninterruptible power supply
| Product ID | Pack | Marking | Qty(PCS) |
| 5N20D | TO-252 | 5N20D | 3000 |
| 5N20Y | TO-251 | 5N20Y | 4000 |
Note: Pin Assignment: G: Gate D: Drain S: Source
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 200 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous | ID | 5 | A |
| Drain Current-Pulsed (Note 1) | IDM | 20 | A |
| Maximum Power Dissipation | PD | 30 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ |
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4. Repetitive Rating: Pulse width limited by maximum junction temperature.
5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
| Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 4.17 | ℃/W |
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 200 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1.2 | 1.7 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2A | - | 520 | 580 | mΩ |
| Forward Transconductance | gFS | VDS=15V,ID=2A | - | 8 | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 580 | - | PF |
| Output Capacitance | Coss | - | 90 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 3 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 12 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 15 | - | nS | |
| Turn-Off Fall Time | tf | - | 15 | - | nS | |
| Total Gate Charge | Qg | VDS=100V,ID=2A, VGS=10V | - | 12 | nC | |
| Gate-Source Charge | Qgs | - | 2.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.8 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=2A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 5 | A | |
Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
|
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A
10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch
6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A
High Current Load Mosfet Power Transistor With Low Gate Resistance
Durable High Power Amplifier Transistor / Hf Power Transistor Customized
Low R DS(ON) Mosfet Power Transistor Battery Protection Switch Use
Load Switch Rf Power Transistor / PWM High Power Mosfet Transistors
Boost Converters Mosfet Power Transistor With High Switching Speed
Active Components High Current Power Transistor / Power Amp Transistor
Original Mosfet Power Transistor For DC/DC Converters In Computing
