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| Categories | Infrared Photoelectric Sensor | 
|---|---|
| Brand Name: | Hamamatsu | 
| Model Number: | S2387-66R | 
| Place of Origin: | Japan | 
| MOQ: | 1 | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 1000pcs/Month | 
| Delivery Time: | 3-5work days | 
| Packaging Details: | In box | 
| Price: | Negotiable | 
| pulse: | 340-1100 | 
| Gap LED 560nm: | 0.33 | 
| typ ua: | 50 | 
| times: | 1.12 | 
| Company Info. | 
| ShenzhenYijiajie Electronic Co., Ltd. | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Product Description:
S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current
Features:
Large area high speed silicon PIN photodiode
The S2387-66R has a large photosensitive area, but has excellent frequency response at 40 MHz. This diode is suitable for FSO(free space Optics) and high speed pulsed light detection.
Product features
Photosensitive area: φ5.0mm
Cut-off frequency: 40 MHz (VR=24 V)
High reliability: TO-8 metal package
Measurement conditions Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=24 V, Cutoff frequency: VR=24 V, Terminal capacitance: VR=24 V, F =1 MHz, λ=λp, Noise equivalent power: VR=24 V, λ=λp, unless otherwise noted
Specifications:
| Peak sensitivity wavelength (typical value) | 920 nm | 
| Sensitivity (typical value) | 0.58 A/W | 
| Dark current (maximum) | 4300pA | 
| Rise time (typical value) | 18 mu s | 
| Junction capacitance (typical value) | 40 pF  | 

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