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S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

Categories Infrared Photoelectric Sensor
Brand Name: Hamamatsu
Model Number: S1336-44BQ
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1000pcs/Month
Packaging Details: Tube
Delivery Time: 3-5work days
Price: Negotiable
Sensitive area: 3.6 × 3.6mm
Number of pixels: 1
Refrigeration and: Non - cooled
encapsulation: Metal
Encapsulation type: TO-5
Reverse voltage (maximum): 5V
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S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

Product Description:

S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry


Features:

High sensitivity in the ULTRAVIOLET band

Low capacitance

High reliability


Specifications:

The spectral response range is190 to 1100 nm
Peak sensitivity wavelength (typical value)960 nm
Sensitivity (typical value)0.5A/W
Dark current (Max.)50 pA
Rise time (typical value.)0.5 mu s
Junction capacitance (typical value)150 pF

Spectral response:

Product Tags:

S1336-44BQ

  

Pin Avalanche Photodiode

  
Quality S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry for sale
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