FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

1.Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

2.Features

RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications

3.Applications

Battery Protection
Load Switch
Power Management

4.SwitchingTest Circuit

5.TSSOP-8L Dimension

6.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and testing equipments. The company has an existing staff of more than 100 people.The company has set up offices in Shenzhen, Hongkong and Singapore providing worldwide service.