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| Categories | Silicon Power Transistor |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | Hua Xuan Yang |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | FMMT491 |
| Type: | Silicon Power Transistor |
| FEATURE: | Low equivalent on-resistance |
| Collector-Emitter Voltage: | 60v |
| Storage Temperature: | -55～+150℃ |
| Collector Power Dissipation: | 250mW |
| Peak Pulse Current: | 2A |
SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN)
Low equivalent on-resistance
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 80 | V |
| VCEO | Collector-Emitter Voltage | 60 | V |
| VEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current | 1 | A |
| ICM | Peak Pulse Current | 2 | A |
| PC | Collector Power Dissipation | 250 | mW |
| RΘJA | Thermal Resistance From Junction To Ambient | 500 | ℃/W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55～+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=100μA,IE=0 | 80 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO1 | IC=10mA,IB=0 | 60 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100μA,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=60V,IE=0 | 0.1 | μA | ||
| Emitter cut-off current | IEBO | VEB=4V,IC=0 | 0.1 | μA | ||
DC current gain | hFE(1) | VCE=5V,IC=1mA | 100 | |||
| hFE(2) 1 | VCE=5V,IC=500mA | 100 | 300 | |||
| hFE(3) 1 | VCE=5V,IC=1A | 80 | ||||
| hFE(4) 1 | VCE=5V,IC=2A | 30 | ||||
Collector-emitter saturation voltage | VCE(sat)1 1 | IC=500mA,IB=50mA | 0.25 | V | ||
| VCE(sat)2 1 | IC=1A,IB=100mA | 0.5 | V | |||
| Base-emitter saturation voltage | VBE(sat) 1 | IC=1A,IB=100mA | 1.1 | V | ||
| Base-emitter voltage | 1 VBE | VCE=5V,IC=1A | 1 | V | ||
| Transition frequency | fT | VCE=10V,IC=50mA,,f=100MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,f=1MHz | 10 | pF |
Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
Typical Characterisitics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.950 TYP | 0.037 TYP | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550 REF | 0.022 REF | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| θ | 0° | 8° | 0° | 8° |
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