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| Categories | Silicon Power Transistor |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | Hua Xuan Yang |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | MMBT4403 |
| FEATURE: | Low Leakage |
| Power mosfet transistor: | SOT-23 Plastic-Encapsulate Transistors |
| Product ID: | MMBT4403 |
| Type: | Switching Diodesod |
SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN)
Switching Transistor
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -40 | V |
| VCEO | Collector-Emitter Voltage | -40 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current | -600 | mA |
| PC | Collector Power Dissipation | 300 | mW |
| RΘJA | Thermal Resistance From Junction To Ambient | 417 | ℃/W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55～+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100μA,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100μA ,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-35V,IE=0 | -0.1 | μA | ||
| Collector cut-off current | ICEX | VCE=-35V, VBE=0.4V | -0.1 | μA | ||
| Emitter cut-off current | IEBO | VEB=-4V,IC=0 | -0.1 | μA | ||
DC current gain | hFE1 | VCE=-1V, IC=-0.1mA | 30 | |||
| hFE2 | VCE=-1V, IC=-1mA | 60 | ||||
| hFE3 | VCE=-1V, IC=-10mA | 100 | ||||
| hFE4 | VCE=-2V, IC=-150mA | 100 | 300 | |||
| hFE5 | VCE=-2V, IC=-500mA | 20 | ||||
Collector-emitter saturation voltage | VCE(sat) | IC=-150mA,IB=-15mA | -0.4 | V | ||
| IC=-500mA,IB=-50mA | -0.75 | V | ||||
Base-emitter saturation voltage | VBE(sat) | IC=-150mA,IB=-15mA | -0.95 | V | ||
| IC=-500mA,IB=-50mA | -1.3 | V | ||||
| Transition frequency | fT | VCE=-10V, IC=-20mA,f =100MHz | 200 | MHz | ||
| Delay time | td | VCC=-30V, VBE(off)=-0.5V IC=-150mA , IB1=-15mA | 15 | ns | ||
| Rise time | tr | 20 | ns | |||
| Storage time | ts | VCC=-30V, IC=-150mA IB1=IB2=-15mA | 225 | ns | ||
| Fall time | tf | 60 | ns |
Typical Characterisitics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.950 TYP | 0.037 TYP | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550 REF | 0.022 REF | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| θ | 0° | 8° | 0° | 8° |
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