TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Name: TIP122 TIP127 Semiconductor Triode TO126 Plastic Encapsulated Transistors
Brand: Hua Xuan Yang
Price: 1 USD

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Categories	Semiconductor Triode
Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS
MOQ:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day
Model Number:	TIP127
Type:	Semiconductor Triode
Power Mosfet Transistor:	TO-126 Plastic Encapsulated
Product ID:	TIP122 TIP127
Feature:	High DC Current Gain
Collector Power Dissipation:	1.25w
Junction Temperature:	150℃

Contact Now

Add to Cart

Company Info.

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

View Contact Details

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

TO-126 Plastic-Encapsulate Transistors

TIP122 Darlington Transistor (NPN)

TIP127 Darlington Transistor (PNP)

FEATURE

Medium Power Complementary Silicon Transistors

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

MARKING

TIP122 , TIP127=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

Equivalent Circuit

ORDERING INFORMATION

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	TIP122	TIP127	Unit
VCBO	Collector-Base Voltage	100	-100	V
VCEO	Collector-Emitter Voltage	100	-100	V
VEBO	Emitter-Base Voltage	5	-5	V
I_C	Collector Current -Continuous	5	-5	A
P_C *	Collector Power Dissipation	1.25		W
RθJA	Thermal Resistance Junction to Ambient	100		℃/W
RθJc	Thermal Resistance Junction to Case	8.33		℃/W
T_J	Junction Temperature	150		℃
Tstg	Storage Temperature	-55~+150		℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

TIP122 NPN
Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=1mA,I_E=0	100		V
Collector-emitter breakdown voltage	V_CEO(SUS)	I_C=30mA,I_B=0	100		V
Collector cut-off current	ICBO	V_CB=100V, I_E=0		0.2	mA
Collector cut-off current	ICEO	V_CE=50 V, I_B=0		0.5	mA
Emitter cut-off current	IEBO	V_EB=5 V, I_C=0		2	mA
DC current gain	hFE(1)	V_CE= 3V, I_C=0.5A	1000
DC current gain	hFE(2)	V_CE= 3V, I_C=3 A	1000	12000
Collector-emitter saturation voltage	V_CE(sat)	I_C=3A,I_B=12mA		2	V
Collector-emitter saturation voltage	V_CE(sat)	I_C=5 A,I_B=20mA		4	V
Base-emitter voltage	VBE	V_CE=3V, I_C=3 A		2.5	V
Output Capacitance	Cob	V_CB=10V, I_E=0,f=0.1MHz		200	pF

TIP127 PNP
Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-1mA,I_E=0	-100		V
Collector-emitter breakdown voltage	V_CEO(SUS)	I_C=-30mA,I_B=0	-100		V
Collector cut-off current	ICBO	V_CB=-100V, I_E=0		-0.2	mA
Collector cut-off current	ICEO	V_CE=-50 V, I_B=0		-0.5	mA
Emitter cut-off current	IEBO	V_EB=-5 V, I_C=0		-2	mA
DC current gain	hFE(1)	V_CE=-3V, I_C=-0.5A	1000
DC current gain	hFE(2)	V_CE=-3V, I_C=-3A	1000	12000
Collector-emitter saturation voltage	V_CE(sat)	I_C=-3A,I_B=-12mA		-2	V
Collector-emitter saturation voltage	V_CE(sat)	I_C=-5 A,I_B=-20mA		-4	V
Base-emitter voltage	VBE	V_CE=-3V, I_C=-3 A		-2.5	V
Output Capacitance	Cob	V_CB=-10V, I_E=0,f=0.1MHz		300	pF

* This test is performed with no heat sink at T_a=25℃.

TO-126 Package Outline Dimensions

Product Tags:

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!