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| Categories | Mosfet Power Transistor | 
|---|---|
| Place of Origin: | ShenZhen China | 
| Brand Name: | Hua Xuan Yang | 
| Certification: | RoHS、SGS | 
| MOQ: | 1000-2000 PCS | 
| Price: | Negotiated | 
| Packaging Details: | Boxed | 
| Delivery Time: | 1 - 2 Weeks | 
| Payment Terms: | L/C T/T Western Union | 
| Supply Ability: | 18,000,000PCS / Per Day | 
| Model Number: | 8H02ETS | 
| Product name: | Mosfet Power Transistor | 
| VDSS: | 6.0 A | 
| APPLICATION: | Power Management | 
| FEATURE: | Low Gate Charge | 
| Power mosfet transistor: | SOT-23-6L Plastic-Encapsulate | 
20V N+N-Channel Enhancement Mode MOSFET
DESCRIPTION
The 8H02ETSuses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V.
GENERAL FEATURES
VDS = 20V,ID = 7A
8H02TS RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4V
RDS(ON) < 20mΩ @ VGS=4.5V
ESD Rating:2000V HBM
Application
Battery protection
Load switch Power management

Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) | 
| 8H02ETS | TSSOP-8 | 8H02ETS WW YYYY | 5000/3000 | 
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit | 
| Drain-Source Voltage | VDS | 20 | V | 
| Gate-Source Voltage | VGS | ±12 | V | 
| Drain Current-Continuous@ Current-Pulsed (Note 1) | ID | 7 | V | 
| Maximum Power Dissipation | PD | 1.5 | W | 
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ | 
| Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 83 | ℃/W | 
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)




                                 
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