4H High Purity Semi Insulating SiC Wafer, Dummy Grade,3”Size

4H High Purity Semi Insulating SiC Wafer, Dummy Grade,3”Size

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.

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SILICON CARBIDE MATERIAL PROPERTIES

4H High Purity Semi Insulating SiC Wafer, Dummy Grade,3”Size

SiC Crystal Structure

SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.

Growth of Hexagonal Polytype SiC Wafers

In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that it offered the first possibility of reproducibly growing acceptably large single crystals of SiC that could be cut and polished into mass-produced SiC wafers. The basic growth process is based on heating polycrystalline SiC source material to ~2400°C under conditions, where it sublimes into the vapor phase and subsequently condenses onto a cooler SiC seed crystal .This produces a somewhat cylindrical boule of single-crystal SiC that grows taller roughly at the rate of a few millimeters per hour. To date, the preferred orientation of the growth in the sublimation process is such that vertical growth of a taller cylindrical boule proceeds along the <0 0 0 1> crystallographic c-axis direction (i.e., vertical direction in Fig. 5.1). Circular “c-axis” wafers with surfaces that lie normal (i.e., perpendicular to within 10°) to the c-axis can be sawed from the roughly cylindrical boule. After years of further development of the sublimation growth process, Cree, Inc., became the first company to sell 2.5 cm diameter semiconductor wafers of c-axis-oriented 6H-SiC in 1989. Correspondingly, the vast majority of SiC semiconductor electronics development and commercialization has taken place since 1990 using c-axis-oriented SiC wafers of the 6H and 4H-SiC polytypes. N-type, p-type, and semiinsulating SiC wafers of various sizes (presently as large as 7.6 cm in diameter) are now commercially available from a variety of vendors . It is worth noting that attainable substrate conductivities for p-type SiC wafers are more than 10× smaller than for n-type substrates, which is largely due to the difference between donor and acceptor dopant ionization energies in SiC (Table 5.1). More recently, SiC wafers grown with gas sources instead of sublimation of solid sources or a combination of gas and solid sources have also been commercialized . Growth of SiC boules and wafers oriented along other crystallographic directions, such as and “a-face” orientations, have also been investigated over the last decade . While these other SiC wafer orientations offer some interesting differences in device properties compared to conventional c-axis-oriented wafers (mentioned briefly in Section 5.5.5), all commercial SiC electronic parts produced (as of this writing) are manufactured using c-axis-oriented wafers.

Wafer size, cost, and quality are all very critical to the manufacturability and process yield of massproduced semiconductor microelectronics. Compared to commonplace silicon wafer standards, presentday 4H- and 6H-SiC wafers are smaller, more expensive, and generally of inferior quality containing far

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.