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| Categories | Rectifier Diode | 
|---|---|
| Brand Name: | FAIRCHILD | 
| Model Number: | NDT456P | 
| Certification: | Original Factory Pack | 
| Place of Origin: | Philippines | 
| MOQ: | 20 | 
| Price: | Negotiate | 
| Payment Terms: | T/T, Western Union,Paypal | 
| Supply Ability: | 20000 | 
| Delivery Time: | 1 | 
| Packaging Details: | please contact me for details | 
| Drain-Source Voltage: | 30 V | 
| Gate-Source Voltage: | ±20 V | 
| Drain Current: | ±7.5 A | 
| Operating and Storage Temperature Range: | -65 to 150 °C | 
| Thermal Resistance, Junction-to-Ambien: | 42 °C/W | 
| Thermal Resistance, Junction-to-Case: | 12 °C/W | 
| Company Info. | 
| Anterwell Technology Ltd. | 
| View Contact Details | 
| Product List | 
Features
♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V
♦High density cell design for extremely low RDS(ON)
♦High power and current handling capability in a widely used surface mount package.

General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
| Symbol | Parameter | NDT456P | Units | 
| VDSS | Drain-Source Voltage | -30 | V | 
| VGSS | Gate-Source Voltage | ±20 | V | 
| TJ ,TSTG | Operating and Storage Temperature Range | 65 to 150 | °C | 
| RqJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 42 | °C/W | 
| RqJC | Thermal Resistance, Junction-to-Case (Note 1) | 12 | °C/W | 

                                 
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