Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type (π-MOSVI) 2SK3568

Switching Regulator Applications

• Low drain-source ON resistance: R_DS (ON) = 0.4Ω (typ.)

• High forward transfer admittance: |Y_fs| = 8.5S (typ.)

• Low leakage current: I_DSS = 100 μA (V_DS = 500 V)

• Enhancement mode: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

Weight : 1.7 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Marking

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