Sign In | Join Free | My entremaqueros.com
entremaqueros.com
Products
Search by Category
Home > Advertising Lights >

N Type , GaAs Substrate By VGF , 3”, Prime Grade Laser Diodes And LEDs

Categories GaAs Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name: Gaas Substrate Wafer
Wafer Diamter: 3 inch
Package: Single wafer container or cassette
Grade: Prime Grade
Wafer Thickness: 220~450um
keyword: GaAs wafer
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
  • Submit Buying Request
    • Product Details
    • Company Profile

    N Type , GaAs Substrate By VGF , 3”, Prime Grade Laser Diodes And LEDs

    N Type , GaAs Substrate By VGF , 3”, Prime Grade Laser Diodes And LEDs


    PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.


    (GaAs)Gallium Arsenide Wafers for LED Applications

    ItemSpecifications
    Conduction TypeSC/n-type
    Growth MethodVGF
    DopantSilicon
    Wafer Diamter3, inch
    Crystal Orientation(100)2°/6°/15° off (110)
    OFEJ or US
    Carrier Concentration

    (0.4~2.5)E18/cm3


    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility

    1500~3000cm2/V.sec


    Etch Pit Density<5000/cm2
    Laser Marking

    upon request


    Surface Finish

    P/E or P/P


    Thickness

    220~450um


    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    (GaAs)Gallium Arsenide Wafers for LD Applications

    ItemSpecificationsRemarks
    Conduction TypeSC/n-type
    Growth MethodVGF
    DopantSilicon
    Wafer Diamter3, inchIngot or as-cut available
    Crystal Orientation(100)2°/6°/15°off (110)Other misorientation available
    OFEJ or US
    Carrier Concentration(0.4~2.5)E18/cm3
    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility1500~3000 cm2/V.sec
    Etch Pit Density<500/cm2
    Laser Markingupon request
    Surface FinishP/E or P/P
    Thickness220~350um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    Properties of GaAs Crystal

    PropertiesGaAs
    Atoms/cm34.42 x 1022
    Atomic Weight144.63
    Breakdown Fieldapprox. 4 x 105
    Crystal StructureZincblende
    Density (g/cm3)5.32
    Dielectric Constant13.1
    Effective Density of States in the Conduction Band, Nc (cm-3)4.7 x 1017
    Effective Density of States in the Valence Band, Nv (cm-3)7.0 x 1018
    Electron Affinity (V)4.07
    Energy Gap at 300K (eV)1.424
    Intrinsic Carrier Concentration (cm-3)1.79 x 106
    Intrinsic Debye Length (microns)2250
    Intrinsic Resistivity (ohm-cm)108
    Lattice Constant (angstroms)5.6533
    Linear Coefficient of Thermal Expansion,6.86 x 10-6
    ΔL/L/ΔT (1/deg C)
    Melting Point (deg C)1238
    Minority Carrier Lifetime (s)approx. 10-8
    Mobility (Drift)8500
    (cm2/V-s)
    µn, electrons
    Mobility (Drift)400
    (cm2/V-s)
    µp, holes
    Optical Phonon Energy (eV)0.035
    Phonon Mean Free Path (angstroms)58
    Specific Heat0.35
    (J/g-deg C)
    Thermal Conductivity at 300 K0.46
    (W/cm-degC)
    Thermal Diffusivity (cm2/sec)0.24
    Vapor Pressure (Pa)100 at 1050 deg C;
    1 at 900 deg C

    WavelengthIndex
    (µm)
    2.63.3239
    2.83.3204
    33.3169
    3.23.3149
    3.43.3129
    3.63.3109
    3.83.3089
    43.3069
    4.23.3057
    4.43.3045
    4.63.3034
    4.83.3022
    53.301
    5.23.3001
    5.43.2991
    5.63.2982
    5.83.2972
    63.2963
    6.23.2955
    6.43.2947
    6.63.2939
    6.83.2931
    73.2923
    7.23.2914
    7.43.2905
    7.63.2896
    7.83.2887
    83.2878
    8.23.2868
    8.43.2859
    8.63.2849
    8.83.284
    93.283
    9.23.2818
    9.43.2806
    9.63.2794
    9.83.2782
    103.277
    10.23.2761
    10.43.2752
    10.63.2743
    10.83.2734
    113.2725
    11.23.2713
    11.43.2701
    11.63.269
    11.83.2678
    123.2666
    12.23.2651
    12.43.2635
    12.63.262
    12.83.2604
    133.2589
    13.23.2573
    13.43.2557
    13.63.2541

    What is the GaAs Process?

    GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

    What is the Electrical propertiesof GaAs Wafer

    Basic Parameters

    Breakdown field≈4·105 V/cm
    Mobility electrons≤8500 cm2 V-1s-1
    Mobility holes≤400 cm2 V-1s-1
    Diffusion coefficient electrons≤200 cm2/s
    Diffusion coefficient holes≤10 cm2/s
    Electron thermal velocity4.4·105 m/s
    Hole thermal velocity1.8·105m/s

    Mobility and Hall Effect

    Electron Hall mobility versus temperature for different doping levels.

    1. Bottom curve: Nd=5·1015cm-3;
    2. Middle curve : Nd=1015cm-3;
    3. Top curve : Nd=5·1015cm-3
    For weakly doped GaAs at temperature close to 300 K, electron Hall mobility
    µH=9400(300/T) cm2 V-1 s-1
    Electron Hall mobility versus temperature for different doping levels and degrees of compensation (high temperatures):
    Open circles: Nd=4Na=1.2·1017 cm-3;
    Open squares: Nd=4Na=1016 cm-3;
    Open triangles: Nd=3Na=2·1015 cm-3;
    Solid curve represents the calculation for pure GaAs
    For weakly doped GaAs at temperature close to 300 K, electron drift mobility
    µn=8000(300/T)2/3 cm2 V-1 s-1
    Drift and Hall mobility versus electron concentration for different degrees of compensation T= 77 K
    Drift and Hall mobility versus electron concentration for different degrees of compensation T= 300 K

    Approximate formula for the Hall mobility

    . µn =µOH/(1+Nd·10-17)1/2, where µOH≈9400 (cm2 V-1 s-1), Nd- in cm-3
    .

    Temperature dependence of the Hall factor for pure n-type GaAs in a weak magnetic field
    Temperature dependence of the Hall mobility for three high-purity samples

    For GaAs at temperatures close to 300 K, hole Hall mobility

    (cm2V-1s-1), (p - in cm-3)
    For weakly doped GaAs at temperature close to 300 K, Hall mobility
    µpH=400(300/T)2.3 (cm2 V-1 s-1).

    The hole Hall mobility versus hole density.

    At T= 300 K, the Hall factor in pure GaAs

    rH=1.25.

    Transport Properties in High Electric Fields

    Field dependences of the electron drift velocity.

    Solid curve was calculated by
    Dashed and dotted curves are measured data, 300 K
    Field dependences of the electron drift velocity for high electric fields, 300 K.
    Field dependences of the electron drift velocity at different temperatures.
    Fraction of electrons in L and X valleys. nL and nX as a function of electric field F at 77, 160, and 300 K, Nd=0
    Dotted curve - L valleys, dashed curve - X valleys.
    Mean energy E in Γ, L, and X valleys as a function of electric field F at 77, 160, and 300 K, Nd=0
    Solid curve - Γ valleys, dotted curve - L valleys, dashed curve - X valleys.
    Frequency dependences of electron differential mobility.
    µd is real part of the differential mobility; µd*is imaginary part of differential mobility.
    F= 5.5 kV cm-1
    The field dependence of longitudinal electron diffusion coefficient D||F.
    Solid curves 1 and 2 are theoretical calculations. Dashed curves 3, 4, and 5 are experimental data.
    Curve 1 - from
    Curve 2 - from
    Curve 3 - from
    Curve 4 - from
    Curve 5 -
    Field dependences of the hole drift velocity at different temperatures.
    Temperature dependence of the saturation hole velocity in high electric fields
    The field dependence of the hole diffusion coefficient.

    Impact Ionization

    There are two schools of thought regarding the impact ionization in GaAs.

    The first one states that impact ionization rates αi and βi for electrons and holes in GaAs are known accurately enough to distinguish such subtle details such as the anisothropy of αi and βi for different crystallographic directions. This approach is described in detail in the work by Dmitriev et al.[1987].

    Experimental curves αi and βi versus 1/F for GaAs.
    Experimental curves αi and βi versus 1/F for GaAs.
    Experimental curves αi and βi versus 1/F for GaAs.

    The second school focuses on the values of αi and βi for the same electric field reported by different researches differ by an order of magnitude or more. This point of view is explained by Kyuregyan and Yurkov [1989]. According to this approach we can assume that αi = βi. Approximate formula for the field dependence of ionization rates:
    αi = β i =αoexp[δ - (δ2 + (F0 / F)2)1/2]
    where αo = 0.245·106 cm-1; β = 57.6 Fo = 6.65·106 V cm-1 (Kyuregyan and Yurkov [1989]).

    Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction.

    Recombination Parameter

    Pure n-type material (no ~ 1014cm-3)
    The longest lifetime of holesτp ~3·10-6 s
    Diffusion length Lp = (Dp·τp)1/2Lp ~30-50 µm.
    Pure p-type material
    (a)Low injection level
    The longest lifetime of electronsτn ~ 5·10-9 s
    Diffusion length Ln = (Dn·τ n)1/2Ln ~10 µm
    (b) High injection level (filled traps)
    The longest lifetime of electronsτ ~2.5·10-7 s
    Diffusion length LnLn ~ 70 µm

    Surface recombination velocity versus doping density

    Different experimental points correspond to different surface treatment methods.

    Radiative recombination coefficient

    90 K1.8·10-8cm3/s
    185 K1.9·10-9cm3/s
    300 K7.2·10-10cm3/s

    Auger coefficient

    300 K~10-30cm6/s
    500 K~10-29cm6/s

    Are You Looking for GaAs Wafer?

    PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

    Quality N Type , GaAs Substrate By VGF , 3”, Prime Grade Laser Diodes And LEDs for sale
    Send your message to this supplier
     
    *From:
    *To: XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
    *Subject:
    *Message:
    Characters Remaining: (0/3000)
     
    Inquiry Cart 0

    Friendly Links: www.everychina.com

    Home| Products| Suppliers| Quality Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们

    Copyright © 2009 - 2024 entremaqueros.com. All rights reserved.