LGS Series Electro-optic (EO) Q-switch Pockels Cell
A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very
high damage threshold (about 9 times as that of LN), excellent E-O
coefficient, high temperature stability (better than quartz), the
Q-switch is based on the consideration that the total rotation
angle of the polarization plane is zero, whereas the polarized wave
propagates through the Pockels cell back and forth, with the
polarization plane gyration and electro-optic effect existing
simultaneously, therefore it is widely used in E-O components such
as E-O modulator, Q-switch, etc.
The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that
can be used in medium output energy lasers to partially take the
place of DKDP and LiNbO3 series Q-switches.
|Crystal Structure||Trigonal; a＝b＝7.453Å,c＝6.293Å|
|Melting Point||1470 °C|
|Transparency Range||242 - 3200 nm|
|Electro-Optic Coefficients||γ41＝1.8 pm/V, γ11＝2.3 pm/V|
|Thermal Expansion Coefficients||α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)|
- LGS -based Q-switch (Pockels cell);
- For wavelengths up to 3.2μm;
- Transmitted Wave Front Distortion: < l/4;
- Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
- LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.