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LGS Series Electro - Optic Pockel Cell Q Switch Active NLO Material

Categories Pockels Cell Q Switch
Brand Name: Crystro
Place of Origin: China
MOQ: 1pc
Price: USD 500-1500/pc
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Delivery Time: 4-5 weeks
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    LGS Series Electro - Optic Pockel Cell Q Switch Active NLO Material

    LGS Series Electro-optic (EO) Q-switch Pockels Cell

    A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

    The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP and LiNbO3 series Q-switches.

    Basic Properties:

    Chemical FormulaLa3Ga5SiQ14
    Crystal StructureTrigonal; a=b=7.453Å,c=6.293Å
    Density5.75 g/cm3
    Melting Point1470 °C
    Transparency Range242 - 3200 nm
    Refractive Index1.89
    Electro-Optic Coefficientsγ41=1.8 pm/V, γ11=2.3 pm/V
    Resistivity1.7×1010 Ω·cm
    Thermal Expansion Coefficientsα11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)


    • LGS -based Q-switch (Pockels cell);
    • For wavelengths up to 3.2μm;
    • Transmitted Wave Front Distortion: < l/4;
    • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
    • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.
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